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Spin recovery in the 25nm gate length InGaAs field effect transistore

Thorpe, B., Kalna, K., Langbein, Frank Curd and Schirmer, S. G. 2017. Spin recovery in the 25nm gate length InGaAs field effect transistore. Presented at: International Workshop on Computational Nanotechnology, Windermere, UK, 6-9 June 2017. Proc. International Workshop on Computational Nanotechnology. pp. 168-169.

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Abstract

We augmented an ensemble Monte-Carlo semiconductor device simulator [3] to incorporate electron spin degrees of freedom using a Bloch equation model to investigate the feasibility of spintronic devices. Results are presented for the steady state polarization and polarization decay due to scattering and spin orbit coupling for a III-V MOSFET device as a function of gate voltages, injection polarization and strain.

Item Type: Conference or Workshop Item (Poster)
Date Type: Published Online
Status: Published
Schools: Computer Science & Informatics
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Funders: Ser Cymru National Research Network for Advanced Engineering and Materials (grant NRN 082)
Related URLs:
Date of First Compliant Deposit: 12 June 2017
Last Modified: 12 Jun 2017 09:28
URI: http://orca.cf.ac.uk/id/eprint/101341

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