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Nondestructive method for mapping metal contact diffusion in In 2 O 3 thin-film transistors

Kryvchenkova, O, Abdullah, I, MacDonald, J. Emyr, Elliott, Martin, Anthopoulos, T D, Lin, Y-H, Igić, P and Cobley, R J 2016. Nondestructive method for mapping metal contact diffusion in In 2 O 3 thin-film transistors. ACS Applied Materials & Interfaces 8 (38) , pp. 25631-25636. 10.1021/acsami.6b10332

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Abstract

The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion in to the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modelling is developed for the non-destructive detection of contact diffusion on active devices. Scans of the surface potential are modelled using physically-based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip-sample interactions. The method is particularly useful for semiconductor- and metal- semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: American Chemical Society
ISSN: 1944-8244
Funders: Iraqi Cultural Attache, European Research Council, Zienkiewicz Scholarship (Swansea), EPSRC
Date of First Compliant Deposit: 19 June 2017
Date of Acceptance: 1 September 2016
Last Modified: 26 May 2019 22:46
URI: http://orca.cf.ac.uk/id/eprint/101496

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