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Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature

Kim, Hyunseok, Lee, Wook-Jae, Farrell, Alan C., Morales, Juan S. D., Senanayake, Pradeep, Prikhodko, Sergey V., Ochalski, Tomasz J. and Huffaker, Diana L. 2017. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature. Nano Letters 17 (6) , pp. 3465-3470. 10.1021/acs.nanolett.7b00384

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Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III–V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits. Here, we demonstrate for the first time optically pumped III–V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a prepatterned SOI platform. These results represent a new platform for ultracompact and energy-efficient optical links and unambiguously point the way toward practical and functional nanowire lasers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 1530-6984
Date of First Compliant Deposit: 10 July 2017
Last Modified: 24 Apr 2020 17:35

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