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Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors

Farrell, Alan C., Senanayake, Pradeep, Meng, Xiao, Hsieh, Nick Y. and Huffaker, Diana L. 2017. Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors. Nano Letters 17 (4) , pp. 2420-2425. 10.1021/acs.nanolett.7b00024

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Abstract

We present the electrical properties of p–n junction photodetectors comprised of vertically oriented p-GaAs nanowire arrays on the n-GaAs substrate. We measure an ideality factor as low as n = 1.0 and a rectification ratio >108 across all devices, with some >109, comparable to the best GaAs thin film photodetectors. An analysis of the Arrhenius plot of the saturation current yields an activation energy of 690 meV—approximately half the bandgap of GaAs—indicating generation–recombination current from midgap states is the primary contributor to the leakage current at low bias. Using fully three-dimensional electrical simulations, we explain the lack of a recombination current dominated regime at low forward bias, as well as some of the issues related to analysis of the capacitance–voltage characteristics of nanowire devices. This work demonstrates that, through proper design and fabrication, nanowire-based devices can perform as well as their bulk device counterparts.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Physics and Astronomy
Publisher: American Chemical Society
ISSN: 1530-6984
Last Modified: 15 Jul 2019 12:11
URI: http://orca.cf.ac.uk/id/eprint/101747

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