Surface zeta potential and diamond seeding on gallium nitride films

Mandal, Soumen, Thomas, Evan L. H., Middleton, Callum, Gines, Laia, Griffiths, James T., Kappers, Menno J., Oliver, Rachel A., Wallis, David J., Goff, Lucy E., Lynch, Stephen A., Kuball, Martin and Williams, Oliver A. 2017. Surface zeta potential and diamond seeding on gallium nitride films. ACS Omega 2 (10) , pp. 7275-7280. 10.1021/acsomega.7b01069

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Abstract

Measurement of zeta potential of Ga-face and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-face shows a more negative zeta potential due to larger concentration of adsorbed oxygen. Zeta potential data clearly showed that H-terminated diamond seed solution at pH 8 will be optimal for the self assembly of a monolayer of diamond nanoparticles on the GaN surface. Subsequent growth of thin diamond �lms on GaN seeded with H-terminated diamond seeds produced fully coalesced �lms con�rming a seeding density in excess of 1011 cm

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy Engineering
Subjects:	Q Science > QC Physics
Additional Information:	This is an open access article published under a Creative Commons Attribution (CC-BY)License, which permits unrestricted use, distribution and reproduction in any medium,provided the author and source are cited.
Publisher:	American Chemical Society
ISSN:	2470-1343
Funders:	EPSRC
Date of First Compliant Deposit:	9 October 2017
Date of Acceptance:	6 October 2017
Last Modified:	29 Oct 2020 16:45
URI:	http://orca.cf.ac.uk/id/eprint/105303

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