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Resonant Photoemission Spectroscopy study on the contribution of the Yb4f states to the electronic structure of ZnO

Demchenko, I, Melikhov, Yevgen, Konstantynov, P, Ratajczak, R, Barcz, A and Guziewicz, E 2018. Resonant Photoemission Spectroscopy study on the contribution of the Yb4f states to the electronic structure of ZnO. Acta Physica Polonica A 133 (4) , pp. 907-909. 10.12693/APhysPolA.131.907

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Abstract

The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy (RPES). The contribution of Yb 4f partial density of states (PDOS) is predominant in the binding energy (BE) about 7.5 and ~11.7 eV below the VB maximum. At the resonance energy, around 182 eV, the multiplet structure with the highest BE shows the strongest resonance (around 11.7 eV) that corresponds to the 1I multiplet which is almost exclusively responsible for this resonance, while 3H and 3F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f PDOS distribution shows some similarity to Yb2O3.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Subjects: Q Science > QC Physics
Date of First Compliant Deposit: 25 October 2017
Date of Acceptance: 21 September 2017
Last Modified: 02 Jul 2019 06:40
URI: http://orca.cf.ac.uk/id/eprint/105801

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