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Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor

Thorpe, B., Schirmer, S., Kalna, K. and Langbein, Frank. 2017. Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor. Journal of Applied Physics 122 (22) , 223903. 10.1063/1.4994148

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Abstract

Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble self-consistent Monte Carlo device simulator with a Bloch equation model using a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings is developed and applied to a spin field effect transistor (spinFET) operating under externally applied voltages on a gate and a drain. In particular, we simulate electron spin transport in a \SI{25}{nm} gate length \chem{In_{0.7}Ga_{0.3}As} metal-oxide-semiconductor field-effect transistor (MOSFET) with a CMOS compatible architecture. We observe non-uniform decay of the net magnetization between the source and gate and a magnetization recovery effect due to spin refocusing induced by a high electric field between the gate and drain. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is strain-sensitive and can be increased twofold by strain induced into the channel.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Computer Science & Informatics
Publisher: American Institute of Physics
ISSN: 0021-8979
Funders: Cymru National Research Network for Advanced Engineering and Materials (grant NRN082)
Date of First Compliant Deposit: 19 November 2017
Date of Acceptance: 14 November 2017
Last Modified: 26 Jan 2018 16:29
URI: http://orca.cf.ac.uk/id/eprint/106719

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