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Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy

Ma, Y. J., Zhang, Y. G., Gu, Y., Xi, S. P., Chen, X. Y., Liang, Baolai, Juang, Bor-Chau, Huffaker, Diana L., Du, B., Shao, X. M. and Fang, J. X. 2017. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy. Aip Advances 7 (7) , 075117. 10.1063/1.4989884

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Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: American Institute of Physics
ISSN: 2158-3226
Date of First Compliant Deposit: 12 January 2018
Date of Acceptance: 3 July 2017
Last Modified: 13 Jan 2018 13:05
URI: http://orca.cf.ac.uk/id/eprint/108132

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