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Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Wang, Yin, Sheng, Xinzhi, Guo, Qinglin, Li, Xiaoli, Wang, Shufang, Fu, Guangsheng, Mazur, Yuriy I., Maidaniuk, Yurii, Ware, Morgan E., Salamo, Gregory J., Liang, Baolai and Huffaker, Diana 2017. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. Nanoscale Research Letters 12 , 229. 10.1186/s11671-017-1998-8

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Abstract

Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations of this system which correlate with the experimental observations indicate that a thin QW must be more affected by interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Springer
ISSN: 1931-7573
Date of First Compliant Deposit: 12 January 2018
Date of Acceptance: 13 March 2017
Last Modified: 30 Apr 2018 14:17
URI: http://orca.cf.ac.uk/id/eprint/108133

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