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High performance GaN high electron mobility transistors on low resistivity silicon for $X$ -Band Applications

Eblabla, Abdalla, Li, X, Thayne, I., Wallis, David, Guiney, I. and Elgaid, Khaled 2015. High performance GaN high electron mobility transistors on low resistivity silicon for $X$ -Band Applications. IEEE Electron Device Letters 36 (9) , pp. 899-901. 10.1109/LED.2015.2460120

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Abstract

This letter reports the RF performance of a 0.3-μm gate length AlGaN/AlN/GaN HEMT realized on a 150-mm diameter low-resistivity (LR) (σ < 10 � · cm) silicon substrate. Short circuit current gain ( fT ) and maximum frequency of oscillation ( fMAX) of 55 and 121 GHz, respectively, were obtained. To our knowledge, these are the highest fT / fMAX values reported to date for GaN HEMTs on LR silicon substrates.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Date of First Compliant Deposit: 12 February 2018
Date of Acceptance: 11 July 2015
Last Modified: 31 Mar 2018 20:56
URI: http://orca.cf.ac.uk/id/eprint/109055

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