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Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application

Eblabla, A, Li, X, Thayne, I, Wallis, D, Guiney, I and Elgaid, Khaled 2015. Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application. Presented at: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015.

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Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on Si substrate are emerging as an attractive devices for many RF applications. This is due to lower circuits realization cost and multifunction chips integration. In this study we investigate the effect of AlN spacer between AlGaN and GaN of a sub-micron gate (0.3 μm) AlGaN/GaN and AlGaN/AlN/GaN HEMTs on a Low Resistivity LR Si substrates on RF performance. We have observed an enhancement in RF performance fT and fMAX in the HEMT with of AlN spacer; (fT) was increased from 47 GHz to 55 GHz and (fMAX) was increased from 79 GHz to 121 GHz. This enhancement in performance is mainly due to the increase in the mobility in the channel and confinement of the carriers reducing Cgs, and delay τ under the gate. We believe this is the first RF study of this type as previous studies were based on the effects of the DC characteristic of the devices

Item Type: Conference or Workshop Item (Paper)
Date Type: Completion
Status: Unpublished
Schools: Engineering
Last Modified: 12 Jun 2019 02:17
URI: http://orca.cf.ac.uk/id/eprint/109475

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