Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node

Moran, David A. J., McLelland, Helen, Elgaid, Khaled, Whyte, Griogair, Stanley, Colin R. and Thayne, Iain 2006. 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions of Electron Devices 53 (12) , pp. 2920-2925. 10.1109/TED.2006.885674

Full text not available from this repository.
Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: IEEE
ISSN: 0018-9383
Last Modified: 09 Mar 2018 11:27
URI: http://orca.cf.ac.uk/id/eprint/109535

Citation Data

Cited 21 times in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item