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Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition

Zhou, Haiping, Elgaid, Khaled, Wilkinson, Chris and Thayne, Iain 2006. Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics 45 (10B) , 8388. 10.1143/JJAP.45.8388

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
ISSN: 0021-4922
Last Modified: 08 Mar 2018 16:26
URI: http://orca.cf.ac.uk/id/eprint/109536

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