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Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs

Yang, L, Asenov, A, Watling, J.R, Boriçi, M, Barker, J.R, Roy, S, Elgaid, Khaled, Thayne, I and Hackbarth, T 2004. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability 44 (7) , pp. 1101-1107. 10.1016/j.microrel.2004.04.003

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Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Elsevier
ISSN: 0026-2714
Last Modified: 09 Mar 2018 10:46
URI: http://orca.cf.ac.uk/id/eprint/109544

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