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Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes

Elgaid, Khaled, Li, Xu, Williamson, F., McLelland, H., Ferguson, S.M., Holland, M.C., Beaumont, S.P. and Thayne, I.G. 1999. Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics letters 35 (19) , pp. 1678-1679. 10.1049/el:19991104

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Abstract

The authors show that in a GaAs HEMT-based monolithic millimetre-wave integrated circuit process flow, prior to gate metallisation the introduction of a hydrofluoric acid cleaning process after gate recess etching results in a significant reduction in the Schottky diode turn-on voltage, series resistance and bias dependent RF junction resistance

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institution of Engineering & Technology
ISSN: 0013-5194
Last Modified: 23 Mar 2018 14:39
URI: http://orca.cf.ac.uk/id/eprint/109550

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