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Optoelectronic properties of GaAs nanowire photodetector

Wang, H., Parkinson, P., Tian, J., Saxena, D., Mokkapati, Sudha, Gao, Q., Prasai, P., Fu, L., Karouta, F., Tan, H. H. and Jagadish, C. 2012. Optoelectronic properties of GaAs nanowire photodetector. Presented at: COMMAD 2012, Melbourne, Australia, 12-14 December 2012. COMMAD 2012 Conference on Optoelectronic and Microelectronic Materials & Devices. IEEE, p. 139. 10.1109/COMMAD.2012.6472399

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A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Item Type: Conference or Workshop Item (Paper)
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: IEEE
ISSN: 1097-2137
Last Modified: 23 Jan 2020 04:18

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