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Interference lithography processes with high-power laser pulses

Meunier, Michel, Rodriguez, A., Holmes, Andrew S., Ellman, M., Ayerdi, I., Niino, Hiroyuki, Gu, Bo, Perez, N., Olaizola, S. M., Zhang, J., Ji, Z., Berthou, T., Peng, C. S., Verevkin, Y. K. and Wang, Z. 2009. Interference lithography processes with high-power laser pulses. Presented at: SPIE LASE: Lasers and Applications in Science and Engineering, San Jose, California, 2009. Published in: Meunier, Michel, Holmes, Andrew S., Niino, Hiroyuki and Gu, Bo eds. Laser Applications in Microelectronic and Optoelectronic Manufacturing VII. International Society for Optical Engineering; 1999, 72010R. 10.1117/12.808834

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Abstract

Laser interference lithography (LIL) is concerned with the use of interference patterns generated from two or several coherent beams of laser radiation for the structuring of materials. This paper presents the work on the processes based on resists and direct writing with laser interference lithography. In the work, a four-beam laser interference system was used as a submicrometer structuring tool in which a high-energy pulsed, frequency-tripled and TM polarized Nd:YAG laser (355 nm) with a coherent length of 3 m, energy power up to 320 mJ/cm2, pulse duration of 8 ns and 10 Hz repetition rate was used as a light source. The experimental results were achieved with 2-beam and 4-beam interference patterning. The processes can be used to define submicron surface relieves in large areas for use in the field of MEMS.

Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: International Society for Optical Engineering; 1999
ISSN: 0277-786X
Last Modified: 26 Jul 2018 11:01
URI: http://orca.cf.ac.uk/id/eprint/110046

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