Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704, Ng, Kar Wei and Lau, Kei May 2015. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon. Applied Physics Letters 106 (7) , 072105. 10.1063/1.4913432

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Abstract

We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a “tiara”-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain- free GaAs thin films out of the nanowires without using SiO2 sidewalls for defect termination. Analysis from XRD x-rocking curves yielded full-width-at-half-maximum values of 238 and 154 arc sec from 900 to 2000 nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	AIP Publishing
ISSN:	0003-6951
Date of First Compliant Deposit:	4 April 2018
Date of Acceptance:	11 February 2015
Last Modified:	02 May 2023 15:25
URI:	https://orca.cardiff.ac.uk/id/eprint/110472

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