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Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy

Schuck, Christopher F., McCown, Robin A., Hush, Ashlie, Mello, Austin, Roy, Simon, Spinuzzi, Joseph W., Liang, Baolai, Huffaker, Diana L. and Simmonds, Paul J. 2018. Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy. Journal of Vacuum Science and Technology B 36 (3) , 031803. 10.1116/1.5018002

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The authors report on a comprehensive study of the growth of coherently strained GaAs quantum dots (QDs) on (111) surfaces via the Stranski–Krastanov (SK) self-assembly mechanism. Recent reports indicate that the long-standing challenges, whereby the SK growth mechanism could not be used to synthesize QDs on (111) surfaces, or QDs under tensile strain, have been overcome. However, a systematic study of the SK growth of (111)-oriented, tensile-strained QDs (TSQDs) as a function of molecular beam epitaxy growth parameters is still needed. Here, the authors explore the effects of deposition amount, substrate temperature, growth rate, and V/III flux ratio on the SK-driven self-assembly of GaAs(111)A TSQDs. The authors highlight aspects of TSQD SK self-assembly on (111) surfaces that appear to differ from the SK growth of traditional compressively strained QDs on (100) surfaces. The unique properties of (111) QDs and tensile-strained QDs mean that they are of interest for various research areas. The results discussed here offer a practical guide for tailoring the size, shape, density, uniformity, and photon emission wavelength and intensity of (111) TSQDs for future applications.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: AIP Publishing
ISSN: 2166-2746
Date of First Compliant Deposit: 4 April 2018
Date of Acceptance: 12 March 2018
Last Modified: 30 Mar 2019 02:30

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