Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

Zaidi, Z. H., Lee, K. B., Roberts, J. W., Guiney, I., Qian, H., Jiang, S., Cheong, J. S., Li, P., Wallis, D. J., Humphreys, C. J., Chalker, P. R. and Houston, P. A. 2018. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs. Journal of Applied Physics 123 (18) , 184503. 10.1063/1.5027822

[img]
Preview
PDF - Accepted Post-Print Version
Download (354kB) | Preview

Abstract

In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: AIP Publishing
ISSN: 0021-8979
Date of First Compliant Deposit: 16 May 2018
Date of Acceptance: 14 May 2018
Last Modified: 18 May 2018 06:46
URI: http://orca.cf.ac.uk/id/eprint/111500

Actions (repository staff only)

Edit Item Edit Item

Downloads

Downloads per month over past year

View more statistics