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Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

Shi, Bei, Li, Qiang and Lau, Kei May 2018. Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters. Journal of Applied Physics 123 (19) , 193104. 10.1063/1.5029255

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Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: American Institute of Physics
ISSN: 0021-8979
Date of First Compliant Deposit: 23 May 2018
Date of Acceptance: 2 May 2018
Last Modified: 30 Jun 2019 15:57
URI: http://orca.cf.ac.uk/id/eprint/111693

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