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Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy

Sobiesierski, Zbigniew, Woolf, D. A., Westwood, David I. and Williams, R. H. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58 (6) , pp. 628-630. 10.1063/1.104550

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Abstract

Photoluminescence measurements have been used to characterize Si‐doped GaAs layers, ranging in thickness from 1.1–8.1 μm, grown on Si(111) and misorientated Si(100) substrates by molecular beam epitaxy. 4.2 K PL spectra for GaAs/Si (100) show a strain‐induced splitting between the heavy and light hole valence bands which corresponds to a biaxial tensile stress of 2.8± 0.15 kbar acting on the GaAs layer. Similar measurements for GaAs/Si(111) indicate that the GaAs layer is subject to a biaxial tensile stress of 3.9±0.15 kbar at 4.2 K. Furthermore, the intensity and line shape of luminescence features for GaAs/Si(111) for the first time indicate a crystalline quality comparable with the best GaAs/Si(100) material.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: GALLIUM ARSENIDES, MOLECULAR BEAM EPITAXY, PHOTOLUMINESCENCE, SILICON, SORPTIVE PROPERTIES, VALENCE BANDS, ION IMPLANTATION, TENSILE PROPERTIES
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 02:35
URI: http://orca.cf.ac.uk/id/eprint/11203

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