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Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP

Yi, Xin, Xie, Shiyu, Liang, Baolai, Woon Lim, Leh, Zhou, Xinxin, Debnath, Mukul C., Huffaker, Diana, Hing Tan, Chee and David, John. P. R. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8 , 9107. 10.1038/s41598-018-27507-w

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Abstract

The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~ 0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: Nature Publishing Group
ISSN: 2045-2322
Related URLs:
Date of First Compliant Deposit: 6 June 2018
Date of Acceptance: 31 May 2018
Last Modified: 15 May 2019 14:13
URI: http://orca.cf.ac.uk/id/eprint/112092

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