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As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

Sobiesierski, Zbigniew, Westwood, David I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M. and Whitehouse, C. R. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70 (11) , pp. 1423-1425. 10.1063/1.118595

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Abstract

Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As2 and/or P2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As2 exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 °C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23±0.05 eV.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds, III-V semiconductors, reflectivity, time resolved spectra, chemical exchanges, surface chemistry, molecular beam epitaxial growth, semiconductor growth, arsenic, phosphorus
Publisher: American Institute of Physics
ISSN: 0003-6951
Last Modified: 04 Jun 2017 02:38
URI: http://orca.cf.ac.uk/id/eprint/11221

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