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In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Zbigniew and Westwood, David I. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82 (1) , pp. 474-476. 10.1063/1.365585

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Abstract

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10−7 and 3.5×10−6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7–1.9 and 2.6–2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Lifelong Learning
Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: indium compounds, III-V semiconductors, surface reconstruction, reflection high energy electron diffraction, semiconductor growth, molecular beam epitaxial growth, surface phase transformations
Publisher: American Institute of Physics
ISSN: 0021-8979
Last Modified: 04 Jun 2017 02:38
URI: http://orca.cf.ac.uk/id/eprint/11222

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