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Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator

Kim, Hyunseok, Lee, Wook-Jae, Farrell, Alan C., Balgarkashi, Akshay and Huffaker, Diana L. 2017. Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator. Nano Letters 17 (9) , pp. 5244-5250. 10.1021/acs.nanolett.7b01360

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Abstract

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Engineering
Publisher: American Chemical Society
ISSN: 1530-6984
Date of First Compliant Deposit: 6 August 2018
Last Modified: 16 Jul 2019 14:38
URI: http://orca.cf.ac.uk/id/eprint/112315

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