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Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy

Teng, K. S, Brown, M. R., Wilks, S.P., Sobiesierski, Angela, Smowton, Peter and Blood, Peter 2004. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy. Journal of Vacuum Science & Technology B : Microelectronics and Nanometer Structures 22 (4) , pp. 2014-2017. 10.1116/1.1768187

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Item Type: Article
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Uncontrolled Keywords: III-V semiconductors ; Aluminium compounds ; Chemical interdiffusion ; Gallium compounds ; Indium compounds ; Interface structure ; Scanning tunnelling microscopy ; Semiconductor superlattices
Publisher: American Institute of Physics
ISSN: 1071-1023
Last Modified: 04 Jun 2017 02:38
URI: http://orca.cf.ac.uk/id/eprint/11257

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