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Highly-mismatched InAs/InSe heterojunction diodes

Velichko, A, Kudrynskyi, Z.R., Paola, D.M.D, Makarovsky, Oleg, Kesaria, Manoj, Krier, A, Sandall, I.C., Tan, C.H., Kovalyuk, Z.D. and Patane, A 2016. Highly-mismatched InAs/InSe heterojunction diodes. Applied Physics Letters 109 (18) , pp. 182115-182119. 10.1063/1.4967381

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We report on heterojunction diodes prepared by exfoliation and direct mechanical transfer of a p-type InSe thin film onto an n-type InAs epilayer. We show that despite the different crystal structures and large lattice mismatch (∼34%) of the component layers, the junctions exhibit rectification behaviour with rectification ratios of ∼104 at room temperature and broad-band photoresponse in the near infrared and visible spectral ranges.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Subjects: Q Science > QC Physics
Publisher: AIP Publishing
ISSN: 0003-6951
Date of Acceptance: 1 October 2015
Last Modified: 23 May 2019 15:06

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