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Low bandgap mid-infrared thermophotovoltaic arrays based on InAs

Krier, A., Yin, M., Marshall, A. R. J., Kesaria, M., Krier, S. E., McDougall, S., Meredith, W., Johnson, A. D., Inskip, J. and Scholes, A. 2015. Low bandgap mid-infrared thermophotovoltaic arrays based on InAs. Infrared Physics and Technology 73 , pp. 126-129. 10.1016/j.infrared.2015.09.011

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We demonstrate the first low bandgap thermophotovoltaic (TPV) arrays capable of operating with heat sources at temperatures as low as 345 °C, which is the lowest ever reported. The individual array elements are based on narrow band gap InAs/InAs0.61Sb0.13P0.26 photodiode structures. External power conversion efficiency was measured to be ∼3% from a single element at room temperature, using a black body at 950 °C. Both 25-element and 65-element arrays were fabricated and exhibited a TPV response at different source temperatures in the range 345–950 °C suitable for electricity generation from waste heat and other applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Elsevier
ISSN: 1350-4495
Last Modified: 10 Oct 2018 15:00

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