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Peculiarities of the hydrogenated In(AsN) alloy

Birindelli, S., Kesaria, M., Giubertoni, D., Pettinari, G., Velichko, A. V., Zhuang, Q. D., Krier, A., Patane, A., Polimeni, A. and Capizzi, M. 2015. Peculiarities of the hydrogenated In(AsN) alloy. Semiconductor Science and Technology 30 (10) , 105030. 10.1088/0268-1242/30/10/105030

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Abstract

The electronic properties of In(AsN) before and after post-growth sample irradiation with increasing doses of atomic hydrogen have been investigated by photoluminescence. The electron density increases in In(AsN) but not in N-free InAs, until a Fermi stabilization energy is established. A hydrogen epsilon+/− transition level just below the conduction band minimum accounts for the dependence of donor formation on N, in agreement with a recent theoretical report highlighting the peculiarity of InAs among III–V compounds. Raman scattering measurements indicate the formation of N–H complexes that are stable under thermal annealing up to ~500 K. Finally, hydrogen does not passivate the electronic activity of N, thus leaving the band gap energy of In(AsN) unchanged, once more in stark contrast to what has been reported in other dilute nitride alloys.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: IOP Publishing: Hybrid Open Access
ISSN: 0268-1242
Date of Acceptance: 6 August 2015
Last Modified: 10 Oct 2018 15:15
URI: http://orca.cf.ac.uk/id/eprint/115533

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