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Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

Wheatley, R., Kesaria, M., Mawst, L. J., Kirch, J. D., Kuech, T. F., Marshall, A., Zhuang, Q. D. and Krier, A. 2015. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters 106 (23) , 232105. 10.1063/1.4922590

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Abstract

Extended wavelength photoluminescence emission within the technologically important 2–5 μm spectral range has been demonstrated from InAs1−xNx and In1−yGayAs1−xNx type I quantum wells grown onto InP. Samples containing N ∼ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: AIP Publishing
ISSN: 0003-6951
Last Modified: 15 Mar 2019 15:48
URI: http://orca.cf.ac.uk/id/eprint/115534

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