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High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Bhasker, H. P., Dhar, S., Sain, A., Kesaria, Manoj and Shivaprasad, S. M. 2012. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy. Applied Physics Letters 101 (13) , p. 132109. 10.1063/1.4755775

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Item Type: Article
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: AIP Publishing
ISSN: 0003-6951
Date of Acceptance: 1 September 2012
Last Modified: 05 Oct 2018 15:00
URI: http://orca.cf.ac.uk/id/eprint/115544

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