Cardiff University | Prifysgol Caerdydd ORCA
Online Research @ Cardiff 
WelshClear Cookie - decide language by browser settings

GaAs solar Ccells on nanopatterned Si substrates

Vaisman, Michelle, Jain, Nikhil, Li, Qiang, Lau, Kei May, Makoutz, Emily, Saenz, Theresa, McMahon, Willian E., Tamboli, Adele C. and Warren, Emily L. 2018. GaAs solar Ccells on nanopatterned Si substrates. IEEE Journal of Photovoltaics 8 (6) , pp. 1635-1640. 10.1109/JPHOTOV.2018.2871423

Full text not available from this repository.

Abstract

Integrating III-Vs onto Si is a promising route toward tandem photovoltaics and cost mitigation of III-V substrates. While many III-V/Si photovoltaic integration approaches have been studied, epitaxial growth on Si allows for fewer processing steps compared to other approaches. However, current epitaxial pathways utilize expensive techniques, such as thermal cycle annealing or thick buffer layers to control defect densities, undermining the low-cost goal of integrating III-Vs with Si. Here, we present single-junction GaAs solar cells grown directly on Si using selective area growth as an alternative low-cost technique to control material quality with a much thinner buffer. We demonstrate a 10.4%-efficient GaAs device grown on a V-grooved Si substrate, which achieved an antiphase domain-free III-V/Si interface and a threading dislocation density of 2 × 10 7 cm -2 , despite the lack of a graded buffer. We compare this growth on V-grooved Si to solar cells grown on polished Si with and without a patterned silica buffer layer, which demonstrate efficiencies of 6.5% and 6.8%, respectively; the polished Si was patterned using nanoimprint lithography, which is a low-cost patterning technique compatible with III-V selective area growth. Cracking is found to be a critical challenge that hinders solar cell performance and is exacerbated by the V-grooved Si surface topography. The results in this paper provide a promising pathway toward high-efficiency, low-cost III-V/Si tandem photovoltaics.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 2156-3381
Last Modified: 15 Jan 2019 11:30
URI: http://orca.cf.ac.uk/id/eprint/115793

Citation Data

Cited 1 time in Scopus. View in Scopus. Powered By Scopus® Data

Actions (repository staff only)

Edit Item Edit Item