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Ge quantum well plasmon-enhanced quantum confined Stark effect modulator

Chaisakul, P., Marris-Morini, D., Abadia, Nicolas, Frigerio, J., Isella, G., Chrastina, D., Olivier, S., de Lamaestre, R. Espiau, Bernardin, T., Weeber, J.-C. and Vivien, L. 2014. Ge quantum well plasmon-enhanced quantum confined Stark effect modulator. Presented at: Photonic and Plasmonic Materials for Enhanced Optoelectronic Perfomance, Boston, MA, USA, 1-6 December 2013. Symposium L – Photonic and Plasmonic Materials for Enhanced Optoelectronic Performance. Cambridge: Cambridge University Press, 10.1557/opl.2014.124

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Abstract

We theoretically and experimentally investigate a novel modulation concept on silicon (Si) based on the combination of quantum confinement and plasmon enhancement effects. We experimentally study the suitability of Ge/SiGe quantum wells (QWs) on Si as the active material for a plasmon-enhanced optical modulator. We demonstrate that in QW structures absorption and modulation of light with transverse magnetic (TM) polarization are greatly enhanced due to favorable selection rules. Later, we theoretically study the plasmon propagation at the metal-Ge/SiGe QW interface. We design a novel Ge/SiGe QW structure that allows maximized overlap between the plasmonic mode and the underlying Ge/SiGe QWs.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Physics and Astronomy
Publisher: Cambridge University Press
ISSN: 1946-4274
Last Modified: 14 Dec 2018 16:31
URI: http://orca.cf.ac.uk/id/eprint/117272

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