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Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs

Singh, Manikant, Casbon, Michael A., Uren, Michael J, Pomeroy, James W, Dalcanale, Stefano, Karboyan, Serge, Tasker, Paul J., Wong, Man Hoi, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka and Kuball, Martin 2018. Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs. IEEE Electron Device Letters 39 (10) , pp. 1572-1575. 10.1109/LED.2018.2865832

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Abstract

Comparison between pulsed and CW large signal RF performance of field-plated β-Ga 2 O 3 MOSFETs has been reported. Reduced self-heating when pulse resulted in a power added efficiency of 12%, drain efficiency of 22.4%, output power density of 0.13 W/mm, and maximum gain up to 4.8 dB at 1 GHz for a 2-μm gate length device. Increased power dissipation for higher VDS and IDS resulted in a degradation in performance, which, thermal simulation showed, could be entirely explained by self-heating. Buffer and surface trapping contributions have been evaluated using gate and drain lag measurements, showing minimal impact on device performance. These results suggest that β-Ga 2 O 3 is a good candidate for future RF applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers
ISSN: 0741-3106
Date of First Compliant Deposit: 5 February 2019
Date of Acceptance: 14 August 2018
Last Modified: 23 Jul 2019 09:19
URI: http://orca.cf.ac.uk/id/eprint/119150

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