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A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs

Lok, L. B., Hwang, C.-J., Chong, H. M. H., Thayne, I. G. and Elgaid, K 2009. A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. Presented at: European Microwave Conference (EuMC) 2009, 29 September -1 October 2009. 2009 European Microwave Conference (EuMC). IEEE, -. 10.23919/EUMC.2009.5296151

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Abstract

We present design and measurement results for the first W-band (75-110 GHz) monolithic vector modulator employing tandem couplers and 50 nm GaAs metamorphic high electron mobility transistors (MHEMT). Different gate-width MHEMT devices in the cold configuration were fabricated and characterized up to 110 GHz. The 2×50 μm gate geometry device was selected as the best compromise between low off-state capacitive reactance and on-state resistance. On-wafer measurement results revealed less than 15 dB insertion loss and better than 27 dB of isolation across the full 75-110 GHz band.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9781424447480
Last Modified: 11 Sep 2019 10:30
URI: http://orca.cf.ac.uk/id/eprint/122526

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