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Temperature affected non-equilibrium spin transport in nanoscale In0.3Ga0.7As transistors

Thorpe, Ben, Langbein, Frank, Schirmer, Sophie and Kalna, Karol 2019. Temperature affected non-equilibrium spin transport in nanoscale In0.3Ga0.7As transistors. Presented at: 20th International Workshop on Computational Nanotechnology (IWCN), Evanston, IL, USA, 20-24 May 2019.

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Abstract

Electron spin offers extraordinarily attractive possibilities in the operation of semiconductor devices thanks to the speed and low energy consumption in its control. One application and future candidate for high performance computing and memory applications with ultra-low power consumption are spin field effect transistors (SpinFETs). Originally proposed by Datta-Das, spin transport in a hot electron transistor was demonstrated. In this work, 2D finite-element quantum-corrected ensemble Monte Carlo simulation code to model a realistic nanoscale In0.3Ga0.7As MOSFET, designed on ITRS prescriptions, was augmented to incorporate electron spin-degrees of freedom and spin-orbit coupling to simulate electron spin transport in a realistic nanoscale device, specifically studying the effect of temperature.

Item Type: Conference or Workshop Item (Paper)
Status: Unpublished
Schools: Computer Science & Informatics
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Q Science > QC Physics
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Date of First Compliant Deposit: 21 February 2019
Last Modified: 20 May 2019 14:56
URI: http://orca.cf.ac.uk/id/eprint/122536

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