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120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts

Boyd, E, Moran, D, McLelland, H, Elgaid, K, Chen, Y, Macintyre, D, Thomas, S, Stanley, C R and Thayne, I G 2003. 120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts. Presented at: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 October 2002. Proceedings of the Compound Semiconductors Conference 2002. Institute of Physics Conference Series Boca Raton: CRC Press, -.

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Item Type: Conference or Workshop Item (Paper)
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: CRC Press
ISBN: 9780750309424
Last Modified: 16 Sep 2019 15:15
URI: http://orca.cf.ac.uk/id/eprint/122556

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