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Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs

Thayne, I.G., Taylor, M.R.S., Cameron, N.I., Holland, M.C., Beaumont, S.P., Elgaid, K., Belle, G. and Fairbairn, S. 1995. Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs. Electronics Letters 31 (4) , pp. 324-326. 10.1049/el:19950206

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Abstract

The authors report the input referred low-frequency noise (2-100 kHz) spectra of 0.2 mu m-gate-length GaAs MESFETs which were gate-recess-etched using a selective Freon 12 based dry-etching process. For comparison, the noise spectra of nonselective wet-chemical, ammonia-based gate-recess-etched devices are also presented. Little change in low-frequency noise performance is observed for devices dry-etched for 30-50 s, demonstrating the latitude of the dry-etch process. Additionally, the input referred noise of the wet-etched devices was greater than that of 30, 40 and 50 s dry-etched devices, suggesting that the dry-etching process may passivate traps contributing to the low-frequency noise component of the MESFETs.<>

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institution of Engineering and Technology (IET)
ISSN: 0013-5194
Last Modified: 20 May 2019 10:31
URI: http://orca.cf.ac.uk/id/eprint/122584

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