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Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications

Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40 (6) , pp. 878-880. 10.1109/LED.2019.2912910

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Abstract

This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q.cm) silicon substrates. The developed technology offers a reduction of 37 % in onset voltage, V ON (from 1.34 to 0.84 V), and 36 % in ON-resistance, R ON (1.52 to 0.97 to Q.mm) as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage and reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited VBV of (VBV > 30 V) and I R of (I R <; 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits applications.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Engineering
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
Date of First Compliant Deposit: 9 July 2019
Date of Acceptance: 14 April 2019
Last Modified: 18 Oct 2019 16:39
URI: http://orca.cf.ac.uk/id/eprint/123523

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