Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K.
2019.
Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications.
IEEE Electron Device Letters
40
(6)
, pp. 878-880.
10.1109/LED.2019.2912910
|
Abstract
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q.cm) silicon substrates. The developed technology offers a reduction of 37 % in onset voltage, V ON (from 1.34 to 0.84 V), and 36 % in ON-resistance, R ON (1.52 to 0.97 to Q.mm) as a result of lowering the Schottky barrier height, Φn, when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage and reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited VBV of (VBV > 30 V) and I R of (I R <; 38 μA/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits applications.
Item Type: |
Article
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Date Type: |
Publication |
Status: |
Published |
Schools: |
Engineering |
Publisher: |
Institute of Electrical and Electronics Engineers (IEEE) |
ISSN: |
0741-3106 |
Date of First Compliant Deposit: |
9 July 2019 |
Date of Acceptance: |
14 April 2019 |
Last Modified: |
18 Oct 2019 16:39 |
URI: |
http://orca.cf.ac.uk/id/eprint/123523 |
Citation Data
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