Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation

Le Boulbar, Emmanuel D., Jarvis, Lydia, Hayes, David, Shutts, Samuel, Li, Zhibo, Tang, Mingchu, Liu, Huiyun, Smowton, Peter M. and Abadia, Nicolás 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019. -.

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Item Type:	Conference or Workshop Item (Paper)
Status:	In Press
Schools:	Physics and Astronomy
Date of First Compliant Deposit:	1 July 2019
Date of Acceptance:	22 May 2019
Last Modified:	23 Jul 2020 01:40
URI:	http://orca.cf.ac.uk/id/eprint/123862

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