1.55 μm lasers epitaxially grown on silicon

Shi, Bei, Han, Yu, Li, Qiang ORCID: https://orcid.org/0000-0002-5257-7704 and Lau, Kei May 2019. 1.55 μm lasers epitaxially grown on silicon. IEEE Journal of Selected Topics in Quantum Electronics 25 (6) , 1900711. 10.1109/JSTQE.2019.2927579

Preview

PDF - Accepted Post-Print Version Download (1MB) | Preview

Abstract

We have developed InP based 1.55 μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition (MOCVD) grown 1.55 μm InAs QDs and the InP/Si thin film templates, we have achieved electrically driven 1.55 μm QD lasers on Si operating at room-temperature. To reduce device footprint and energy consumption, a buffer-less integration path by growing InP nano-ridge lasers on pre-patterned silicon-on-insulators (SOI) wafers has been explored. Material and device characterizations and an outlook for device component integration is discussed.

Item Type:	Article
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
ISSN:	1077-260X
Date of First Compliant Deposit:	15 July 2019
Date of Acceptance:	9 July 2019
Last Modified:	07 Nov 2023 05:37
URI:	https://orca.cardiff.ac.uk/id/eprint/124195

Actions (repository staff only)

Edit Item