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Flexbility of Ga-containing type-II superlattice for long-wavelength infrared detection

Delmas, Marie, Kwan, Dominic, Debnath, Mukul, Liang, Baolai and Huffaker, Diana 2019. Flexbility of Ga-containing type-II superlattice for long-wavelength infrared detection. Journal of Physics D: Applied Physics 52 (47) , 475102. 10.1088/1361-6463/ab3b6a
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In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77K are obtained. Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: IOP Publishing
ISSN: 0022-3727
Date of First Compliant Deposit: 21 August 2019
Date of Acceptance: 15 August 2019
Last Modified: 09 Jun 2020 01:45

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