Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission

Ochalski, Tomasz J., Morales, Juan S. D., Gandan, Shumithira, Huffaker, Diana L., Kim, Hyunseok, O'Faolain, Liam, Subramania, Ganapathi S. and Foteinopoulou, Stavroula 2019. Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission. Presented at: SPIE Nanoscience + Engineering, San Diego, United States, 11-15 Aug 2019. Proceedings SPIE 11081, Active Photonic Platforms XI. Proceedings of SPIE. SPIE, p. 82. 10.1117/12.2529494

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Abstract

In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.

Item Type:	Conference or Workshop Item (Paper)
Date Type:	Publication
Status:	Published
Schools:	Physics and Astronomy
Publisher:	SPIE
ISSN:	0277-786X
Date of First Compliant Deposit:	1 October 2019
Date of Acceptance:	12 September 2019
Last Modified:	08 Oct 2019 11:00
URI:	https://orca.cardiff.ac.uk/id/eprint/125819

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