Li, Zhibo, Shutts, Samuel, Allford, Craig P., Shi, Bei, Luo, Wei, Lau, Kei May and Smowton, Peter M.
2019.
Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm.
Presented at: 2019 IEEE Photonics Conference (IPC),
San Antonio, TX, USA,
2- Sept - 3 Oct 2019.
2019 IEEE Photonics Conference (IPC).
IEEE,
p. 1.
10.1109/IPCon.2019.8908479
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Official URL: http://dx.doi.org/10.1109/IPCon.2019.8908479
Abstract
Broad-area 1.55 μm InAs quantum dots (QDs) lasers were fabricated based on monolithic growth of InAs/InAlGaAs/InP active structures on nano-patterned (001) silicon substrates. Device optoelectronic properties and materials' optical gain and absorption features were studied to provide experimental support for further optimizations in laser design.
Item Type: | Conference or Workshop Item (Paper) |
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Date Type: | Published Online |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | IEEE |
Date of First Compliant Deposit: | 28 January 2020 |
Date of Acceptance: | 21 November 2019 |
Last Modified: | 29 Feb 2020 17:08 |
URI: | http://orca.cf.ac.uk/id/eprint/129097 |
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