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Simultaneous optical and electrical characterization of GaN nanowire arrays by means of Vis-IR spectroscopic ellipsometry

Santos, Antonio J., Lacroix, Bertrand, Blanco, Eduardo, Hurand, Simon, Gomez, Victor J., Paumier, Fabien, Girardeau, Thierry, Huffaker, Diana L., García, Rafael and Morales, Francisco M. 2020. Simultaneous optical and electrical characterization of GaN nanowire arrays by means of Vis-IR spectroscopic ellipsometry. Journal of Physical Chemistry C 124 (2) , pp. 1535-1543. 10.1021/acs.jpcc.9b10556
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We report an original and straightforward method for both optical and electrical characterization of vertical GaN nanowire arrays epitaxially grown on silicon through visible-infrared spectroscopic ellipsometry methods. For the initial purpose of adding new inputs to the ellipsometry model, focused ion-beam tomography experiments were conducted to extract porosity/depth profiles of these systems. To reproduce the optical free-carrier behavior in the infrared, the ellipsometric data acquired were fitted to an anisotropic Bruggeman model including Tauc-Lorentz and Drude oscillators, which enabled the determination of carrier density and in-grain mobility. The nice agreement of these results with those obtained by combining Hall effect measurements, X-ray diffraction, and transmission electron microscopy studies supported the validity of the proposed method, opening new horizons in the characterization of nanowire-based semiconducting layers.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: American Chemical Society
ISSN: 1932-7447
Date of First Compliant Deposit: 12 February 2020
Date of Acceptance: 27 December 2019
Last Modified: 10 Mar 2020 23:25

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