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High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer

Huang, Jianliang, Zhao, Chengcheng, Nie, Biying, Xie, Shiyu, Kwan, Dominic C. M., Meng, Xiao, Zhang, Yanhua, Huffaker, Diana L. and Ma, Wenquan 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8 (5) , pp. 755-759. 10.1364/PRJ.385177
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Abstract

We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material. At room temperature, the APD’s peak response wavelength is 3.27 μm, and the 50% cutoff wavelength is 3.5 μm. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 μm when the applied reverse bias voltage is 14.6 V. The measured peak detectivity

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Publisher: Optical Society of America
ISSN: 2327-9125
Date of First Compliant Deposit: 2 June 2020
Date of Acceptance: 22 February 2020
Last Modified: 03 Jun 2020 09:30
URI: http://orca.cf.ac.uk/id/eprint/132122

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