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Membrane supported GaN CPW structures for high-frequency and high-power applications

Eblabla, Abdalla, Alathbah, Moath, Wu, Zehao, Lees, Jonathan and Elgaid, Khaled 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 2019. 2019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE, pp. 1179-1181. 10.1109/APMC46564.2019.9038731

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Abstract

High performance coplanar waveguides (CPWs) on GaN membrane technology for AlGaN/GaN high electron mobility transistors (HEMTs) grown on low-resistivity (LR) Si substrates have been demonstrated in this work. The developed CPW technology shows a remarkable improvement in RF losses when the lossy Si beneath CPW structures is removed, resulting in comparable RF performance to that of CPW realized on high-resistivity (HR) Si and semi-insulating (SI) SiC substrates, with similar AlGaN/GaN top epitaxial layers. Experimental results, first to be reported, demonstrate transmission losses ( S21) of 0.47 dB and Q-factor of 20.77 for the CPW on GaN membrane technology, compared to S21 of 2.95 dB and Q-factor of 4.51 for the CPW on GaN-on-LR Si, at 40 GHz. Furthermore, the influence of substrate parasitics on RF performance of CPW on GaN-based HEMTs grown on various substrates was studied and analyzed by the extraction of transmission line parameters for frequencies up to 40 GHz. These findings offer viable integrated GaN-based HEMTs on LR Si technology suitable for high-power and high-temperature system applications at RF and millimeter-wave frequencies, when used in conjunction with high thermal coefficient materials such as diamond and AIN.

Item Type: Conference or Workshop Item (Paper)
Date Type: Published Online
Status: Published
Schools: Engineering
Publisher: IEEE
ISBN: 9781728135175
Last Modified: 23 Sep 2020 14:30
URI: http://orca.cf.ac.uk/id/eprint/135014

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