Yang, Junjie, Liu, Zizhuo, Jurczak, Pamela, Tang, Mingchu, Li, Keshuang, Pan, Shujie, Sanchez, Ana, Beanland, Richard, Zhang, Jin-Chuan, Wang, Huan, Liu, Fengqi, Li, Zhibo, Shutts, Samuel, Smowton, Peter, Chen, Siming, Seeds, Alwyn and Liu, Huiyun
2021.
All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates.
Journal of Physics D: Applied Physics
54
(3)
, 035103.
10.1088/1361-6463/abbb49
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Abstract
A high-performance III–V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial growth, including threading dislocations and anti-phase boundaries, by growing a more than 2 µm thick III–V buffer layer. However, this relatively thick III–V buffer layer causes the formation of thermal cracks in III–V epi-layers, and hence a low yield of Si-based optoelectronic devices. In this paper, we demonstrate a usage of thin Ge buffer layer to replace the initial part of GaAs buffer layer on Si to reduce the overall thickness of the structure, while maintaining a low density of defects in III–V layers and hence the performance of the InAs/GaAs QD laser. A very high operating temperature of 130 °C has been demonstrated for an InAs/GaAs QD laser by this approach.
Item Type: | Article |
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Date Type: | Publication |
Status: | Published |
Schools: | Physics and Astronomy |
Publisher: | IOP Publishing |
ISSN: | 0022-3727 |
Date of First Compliant Deposit: | 26 October 2020 |
Date of Acceptance: | 24 September 2020 |
Last Modified: | 27 Oct 2020 10:00 |
URI: | http://orca.cf.ac.uk/id/eprint/135911 |
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