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Bias stability of solution-processed In2O3 thin film transistors

Abdullah, Isam, Macdonald, J Emyr, Lin, Yen-Hung, Anthopoulos, Thomas D, Hma Salahr, Nasih, AnwarKakil, Shaida and Muhammedsharif, Fahmi F 2020. Bias stability of solution-processed In2O3 thin film transistors. Journal of Physics: Materials 4 , 015003. 10.1088/2515-7639/abc608

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Abstract

We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.

Item Type: Article
Date Type: Publication
Status: Published
Schools: Physics and Astronomy
Additional Information: Original content fromthis work may be usedunder the terms of theCreative CommonsAttribution 4.0 licence.Any further distributionof this work mustmaintain attribution tothe author(s) and the titleof the work, journalcitation and DOI.
Publisher: IOP Press
ISSN: 2515-7639
Date of First Compliant Deposit: 26 October 2020
Date of Acceptance: 29 October 2020
Last Modified: 23 Nov 2020 11:32
URI: http://orca.cf.ac.uk/id/eprint/135927

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